cascadable silicon bipolar mmic amplifier technical data features ? broadband, minimum ripple cascadable 50 w gain block ? 8.0 0.2 db typical gain flatness from 0.1 to 4.0 ghz ? 3 db bandwidth: 0.1 to 6.0 ghz ? low vswr: 1.5:1 from 0.1 to 4.0 ghz ? 11.5 dbm typical p 1db at 1.0 ghz ? hermetic gold-ceramic microstrip package MSA-0910 100 mil package typical biasing configuration c block c block r bias v cc > 12 v v d = 7.8 v rfc (optional) in out msa 4 1 2 3 description the MSA-0910 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a hermetic, high reliability package. this mmic is designed for very wide bandwidth industrial and military applications that require flat gain and low vswr. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0910 absolute maximum ratings parameter absolute maximum [1] device current 80 ma power dissipation [2,3] 750 mw rf input power +13 dbm junction temperature 200 c storage temperature C65 to 200 c thermal resistance [2,4] : q jc = 145 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.9 mw/ c for t c > 91 c. 4. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 7.0 8.0 9.0 d g p gain flatness f = 0.1 to 4.0 ghz db 0.2 0.5 f 3 db 3 db bandwidth [2] ghz 6.0 input vswr f = 1.0 to 4.0 ghz 1.3:1 output vswr f = 1.0 to 4.0 ghz 1.5:1 nf 50 w noise figure f = 1.0 ghz db 6.0 f = 4.0 ghz 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 11.5 f = 4.0 ghz 6.5 ip 3 third order intercept point f = 1.0 ghz dbm 23.0 t d group delay f = 1.0 ghz psec 100 v d device voltage v 7.0 7.8 8.6 dv/dt device voltage temperature coefficient mv/ c C16.0 notes: 1. the recommended operating current range for this device is 25 to 45 ma. typical performance as a function of current is on the following page. 2. referenced from 0.1 ghz gain (g p ). electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 35 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0910 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 35 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.02 .31 C108 10.6 3.38 150 C13.8 .202 16 .31 C107 0.85 0.05 .18 C114 8.8 2.75 160 C13.5 .212 8 .20 C117 1.06 0.1 .12 C141 8.1 2.53 166 C13.4 .214 3 .14 C139 1.16 0.2 .10 C166 7.9 2.47 167 C13.4 .215 1 .13 C157 1.19 0.4 .10 170 7.8 2.46 163 C13.3 .215 C1 .12 C165 1.20 0.6 .10 156 7.8 2.45 157 C13.3 .216 C3 .13 C167 1.20 0.8 .10 145 7.8 2.46 151 C13.3 .216 C4 .13 C168 1.19 1.0 .10 133 7.8 2.46 144 C13.3 .217 C6 .14 C169 1.19 1.5 .10 111 7.9 2.49 127 C13.2 .220 C10 .16 C173 1.17 2.0 .09 88 8.0 2.51 110 C13.0 .224 C13 .18 177 1.15 2.5 .07 89 8.2 2.58 96 C12.8 .230 C16 .21 167 1.11 3.0 .04 90 8.2 2.58 78 C12.8 .230 C21 .20 151 1.11 3.5 .06 145 8.2 2.57 59 C12.7 .233 C27 .19 137 1.11 4.0 .12 152 8.0 2.50 40 C12.7 .230 C33 .16 125 1.12 4.5 .19 142 7.5 2.38 22 C13.0 .223 C40 .13 116 1.16 5.0 .26 131 6.9 2.21 4 C13.5 .211 C47 .09 118 1.22 5.5 .32 120 6.2 2.04 C12 C14.1 .198 C52 .07 160 1.28 6.0 .38 109 5.3 1.84 C27 C14.8 .181 C56 .13 C173 1.38 6.5 .43 99 4.4 1.65 C42 C15.6 .167 C59 .21 C172 1.46 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 g p (db) 0.1 .05 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 35 ma. 20 10 30 40 50 i d (ma) figure 3. power gain vs. current. 0 2 4 6 8 10 12 4 5 6 8 7 9 g p (db) 0.1 ghz figure 4. output power at 1 db gain compression, noise figure and power gain vs. case temperature, f = 1.0 ghz, i d = 35 ma. 4 5 6 7 7 9 8 11 12 13 ?5 ?5 +25 +85 +125 p 1 db (dbm) nf (db) gp (db) temperature ( c) g p 6.0 ghz 1.0 ghz, 4.0 ghz 1.0 ghz, 4.0 ghz p 1 db nf 2 046810 v d (v) figure 2. device current vs. voltage. 0 10 20 30 50 40 i d (ma) t c = +125 c t c = +25 c t c = ?5 c frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. frequency (ghz) figure 6. noise figure vs. frequency. 5.5 5.0 6.0 6.5 7.0 nf (db) 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 4.0 1.0 5 7 9 11 15 13 p 1 db (dbm) i d = 45 ma i d = 45 ma i d = 35 ma i d = 25 ma i d = 35 ma i d = 25 ma typical performance, t a = 25 c (unless otherwise noted)
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9551e (11/99) 100 mil package dimensions outline 10a 1 3 4 2 ground ground rf output and bias rf input .020 .508 .100 2.54 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .030 .76 .004 .002 .10 .05
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